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IXFH98N60X3 Технические параметры

IXYS  IXFH98N60X3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247 (IXTH)
Mfr IXYS
Package Tube
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 960W (Tc)
Vds - Drain-Source Breakdown Voltage 600 V
Typical Turn-On Delay Time 35 ns
Vgs th - Gate-Source Threshold Voltage 5 V
Pd - Power Dissipation 960 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 30
Mounting Styles Through Hole
Channel Mode Enhancement
Manufacturer IXYS
Brand IXYS
Свойство продукта Значение свойства
Qg - Gate Charge 90 nC
Tradename HiPerFET
Rds On - Drain-Source Resistance 30 mOhms
RoHS Details
Typical Turn-Off Delay Time 76 ns
Id - Continuous Drain Current 98 A
Operating Temperature -55°C ~ 150°C (TJ)
Packaging Tube
Subcategory MOSFETs
Configuration Single
Number of Channels 1 ChannelChannel
FET Type N-Channel
Rds On (Max) @ Id, Vgs 30mOhm @ 49A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 6250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V
Rise Time 13 ns
Drain to Source Voltage (Vdss) 600 V
Vgs (Max) ±20V
Product Type MOSFET
Transistor Type 1 N-Channel
FET Feature -
Product Category MOSFET
Просмотр сходства
IXFH98N60X3 brand manufacturers: IXYS, Anli stock, IXFH98N60X3 reference price.IXYS. IXFH98N60X3 parameters, IXFH98N60X3 Datasheet PDF and pin diagram description download.You can use the IXFH98N60X3 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IXFH98N60X3 pin diagram and circuit diagram and usage method of function,IXFH98N60X3 electronics tutorials.You can download from the Anli.