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IXFH9N80 Технические параметры

IXYS  IXFH9N80 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 9A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 180W Tc
Turn Off Delay Time 70 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 1997
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Additional Feature AVALANCHE RATED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 180W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 900m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Rise Time 15ns
Vgs (Max) ±20V
Fall Time (Typ) 35 ns
Continuous Drain Current (ID) 9A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 9A
Drain-source On Resistance-Max 0.9Ohm
Drain to Source Breakdown Voltage 800V
Recovery Time 250 ns
RoHS Status ROHS3 Compliant
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IXFH9N80 Документы

IXFH9N80 brand manufacturers: IXYS, Anli stock, IXFH9N80 reference price.IXYS. IXFH9N80 parameters, IXFH9N80 Datasheet PDF and pin diagram description download.You can use the IXFH9N80 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IXFH9N80 pin diagram and circuit diagram and usage method of function,IXFH9N80 electronics tutorials.You can download from the Anli.