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IXFK170N10P Технические параметры

IXYS  IXFK170N10P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 170A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 715W Tc
Turn Off Delay Time 90 ns
Operating Temperature -55°C~175°C TJ
Packaging Bulk
Series HiPerFET™, PolarP2™
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Resistance 10mOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Свойство продукта Значение свойства
Pin Count 3
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 714W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 198nC @ 10V
Rise Time 50ns
Vgs (Max) ±20V
Fall Time (Typ) 33 ns
Reverse Recovery Time 150 ns
Continuous Drain Current (ID) 170A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Avalanche Energy Rating (Eas) 2000 mJ
Nominal Vgs 5 V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXFK170N10P Документы

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