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IXFK21N100F Технические параметры

IXYS  IXFK21N100F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 10 Weeks
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Surface Mount NO
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 21A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 500W Tc
Turn Off Delay Time 55 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerRF™
Published 2002
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 500W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 500m Ω @ 10.5A, 10V
Vgs(th) (Max) @ Id 5.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Rise Time 16ns
Drain to Source Voltage (Vdss) 1000V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 21A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.5Ohm
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 84A
Avalanche Energy Rating (Eas) 2500 mJ
REACH SVHC No SVHC
RoHS Status RoHS Compliant

IXFK21N100F Документы

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