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IXFK24N100F Технические параметры

IXYS  IXFK24N100F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 10 Weeks
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Surface Mount NO
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 24A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 560W Tc
Turn Off Delay Time 52 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerRF™
Published 2003
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 560W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 390m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 5.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 195nC @ 10V
Rise Time 18ns
Drain to Source Voltage (Vdss) 1000V
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Continuous Drain Current (ID) 24A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 96A
REACH SVHC No SVHC
RoHS Status RoHS Compliant

IXFK24N100F Документы

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