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IXFK24N100Q3 Технические параметры

IXYS  IXFK24N100Q3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 24A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 1000W Tc
Turn Off Delay Time 45 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Pin Count 3
Element Configuration Single
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 1kW
Case Connection DRAIN
Turn On Delay Time 38 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 440m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 6.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 7200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Rise Time 300ns
Drain to Source Voltage (Vdss) 1000V
Vgs (Max) ±30V
Continuous Drain Current (ID) 24A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.44Ohm
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 60A
Avalanche Energy Rating (Eas) 2000 mJ
Height 26.16mm
Length 19.96mm
Width 5.13mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXFK24N100Q3 Документы

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