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IXFK26N120P Технические параметры

IXYS  IXFK26N120P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 26A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 960W Tc
Turn Off Delay Time 76 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™, PolarP2™
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Pin Count 3
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 960W
Case Connection DRAIN
Turn On Delay Time 56 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 460m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 16000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V
Rise Time 55ns
Drain to Source Voltage (Vdss) 1200V
Vgs (Max) ±30V
Fall Time (Typ) 58 ns
Continuous Drain Current (ID) 26A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.46Ohm
Drain to Source Breakdown Voltage 1.2kV
Pulsed Drain Current-Max (IDM) 60A
Height 26.16mm
Length 19.96mm
Width 5.13mm
Radiation Hardening No
RoHS Status ROHS3 Compliant

IXFK26N120P Документы

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