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IXFK26N60Q Технические параметры

IXYS  IXFK26N60Q technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 26A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 360W Tc
Turn Off Delay Time 80 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 2002
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Additional Feature AVALANCHE RATED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 360W
Case Connection DRAIN
Turn On Delay Time 30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 250m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 5100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Rise Time 32ns
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Continuous Drain Current (ID) 26A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.25Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 104A
Avalanche Energy Rating (Eas) 1500 mJ
Height 26.16mm
Length 19.96mm
Width 5.13mm
RoHS Status RoHS Compliant
Lead Free Lead Free

IXFK26N60Q Документы

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