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IXFK30N100Q2 Технические параметры

IXYS  IXFK30N100Q2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3Pins
Weight 10mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 30A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 735W Tc
Turn Off Delay Time 60 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 2004
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Resistance 400mOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 735W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 400m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 8200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 186nC @ 10V
Rise Time 14ns
Drain to Source Voltage (Vdss) 1000V
Vgs (Max) ±30V
Fall Time (Typ) 10 ns
Reverse Recovery Time 250 ns
Continuous Drain Current (ID) 30A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 120A
Dual Supply Voltage 1kV
Avalanche Energy Rating (Eas) 4000 mJ
Nominal Vgs 5 V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXFK30N100Q2 Документы

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