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IXFK32N100P Технические параметры

IXYS  IXFK32N100P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 32A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 960W Tc
Turn Off Delay Time 76 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™, PolarP2™
Published 2008
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 960W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 320m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 14200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V
Rise Time 55ns
Drain to Source Voltage (Vdss) 1000V
Vgs (Max) ±30V
Fall Time (Typ) 43 ns
Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.32Ohm
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 75A
Avalanche Energy Rating (Eas) 1500 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXFK32N100P Документы

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