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IXFK360N15T2 Технические параметры

IXYS  IXFK360N15T2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 360A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 1670W Tc
Turn Off Delay Time 115 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series GigaMOS™
Published 2009
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Output Voltage 150V
Configuration SINGLE WITH BUILT-IN DIODE
Nominal Supply Current 100A
Operating Mode ENHANCEMENT MODE
Output Current 360A
Case Connection DRAIN
Turn On Delay Time 50 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 47500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 715nC @ 10V
Rise Time 170ns
Vgs (Max) ±20V
Fall Time (Typ) 265 ns
Continuous Drain Current (ID) 360A
Drain-source On Resistance-Max 0.004Ohm
Pulsed Drain Current-Max (IDM) 900A
Number of Drivers 1Driver
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXFK360N15T2 Документы

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