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IXFK38N80Q2 Технические параметры

IXYS  IXFK38N80Q2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 10 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 38A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 735W Tc
Turn Off Delay Time 60 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 2004
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Pin Count 3
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 735W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 220m Ω @ 19A, 10V
Vgs(th) (Max) @ Id 4.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 8340pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
Rise Time 16ns
Vgs (Max) ±30V
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 38A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.22Ohm
Drain to Source Breakdown Voltage 800V
Avalanche Energy Rating (Eas) 4000 mJ
Height 26.16mm
Length 19.96mm
Width 5.13mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXFK38N80Q2 Документы

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