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IXFL38N100Q2 Технические параметры

IXYS  IXFL38N100Q2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS264™
Number of Pins 264Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 29A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 380W Tc
Turn Off Delay Time 57 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 2008
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Pin Count 3
JESD-30 Code R-PSIP-T3
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 380W
Case Connection ISOLATED
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 280m Ω @ 19A, 10V
Vgs(th) (Max) @ Id 5.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 13500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V
Rise Time 28ns
Drain to Source Voltage (Vdss) 1000V
Vgs (Max) ±30V
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 29A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.28Ohm
Drain to Source Breakdown Voltage 1kV
Avalanche Energy Rating (Eas) 5000 mJ
Height 26.42mm
Length 20.29mm
Width 5.21mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXFL38N100Q2 Документы

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