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IXFL39N90 Технические параметры

IXYS  IXFL39N90 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS264™
Number of Pins 264Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 34A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 580W Tc
Turn Off Delay Time 125 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 2003
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Свойство продукта Значение свойства
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 580W
Case Connection ISOLATED
Turn On Delay Time 45 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 220m Ω @ 19.5A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 13400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 375nC @ 10V
Rise Time 68ns
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Continuous Drain Current (ID) 34A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.22Ohm
Drain to Source Breakdown Voltage 900V
Pulsed Drain Current-Max (IDM) 154A
Avalanche Energy Rating (Eas) 4000 mJ
Height 26.42mm
Length 20.29mm
Width 5.21mm
RoHS Status ROHS3 Compliant

IXFL39N90 Документы

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