Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
IXFN100N50P Технические параметры
IXYS IXFN100N50P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | IXYS | |
| Factory Lead Time | 30 Weeks | |
| Mount | Chassis Mount, Screw | |
| Mounting Type | Chassis Mount | |
| Package / Case | SOT-227-4, miniBLOC | |
| Number of Pins | 4Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 90A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 1040W Tc | |
| Turn Off Delay Time | 110 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | PolarHV™ | |
| Published | 2003 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Resistance | 49mOhm | |
| Terminal Finish | Nickel (Ni) | |
| Additional Feature | UL RECOGNIZED, AVALANCHE RATED | |
| Terminal Position | UPPER |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | UNSPECIFIED | |
| Pin Count | 4 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 1.04kW | |
| Case Connection | ISOLATED | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 49m Ω @ 50A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 8mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 20000pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 240nC @ 10V | |
| Rise Time | 29ns | |
| Vgs (Max) | ±30V | |
| Fall Time (Typ) | 26 ns | |
| Continuous Drain Current (ID) | 90A | |
| Threshold Voltage | 5V | |
| Gate to Source Voltage (Vgs) | 30V | |
| Drain to Source Breakdown Voltage | 500V | |
| Pulsed Drain Current-Max (IDM) | 250A | |
| Avalanche Energy Rating (Eas) | 5000 mJ | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
IXFN100N50P Документы
- DatasheetsIXFN100N50P
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ