Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
IXFN120N20 Технические параметры
IXYS IXFN120N20 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | IXYS | |
| Factory Lead Time | 8 Weeks | |
| Mount | Chassis Mount | |
| Mounting Type | Chassis Mount | |
| Package / Case | SOT-227-4, miniBLOC | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 120A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 600W Tc | |
| Turn Off Delay Time | 110 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | HiPerFET™ | |
| Published | 2003 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | Not Applicable | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Resistance | 17MOhm | |
| Terminal Finish | Nickel (Ni) | |
| Additional Feature | AVALANCHE RATED | |
| Voltage - Rated DC | 200V | |
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Current Rating | 120A | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 4 | |
| JESD-30 Code | R-PUFM-X4 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 600W | |
| Case Connection | ISOLATED | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 17m Ω @ 500mA, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 8mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 9100pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 360nC @ 10V | |
| Rise Time | 55ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 40 ns | |
| Continuous Drain Current (ID) | 120A | |
| Threshold Voltage | 4V | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 200V | |
| Pulsed Drain Current-Max (IDM) | 480A | |
| Dual Supply Voltage | 200V | |
| Recovery Time | 250 ns | |
| Nominal Vgs | 4 V | |
| REACH SVHC | No SVHC | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
IXFN120N20 Документы
- DatasheetsIXFN120N20
- PCN Obsolescence/ EOLMult Devices OBS 24/Feb/2014
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ