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IXFN200N07 Технические параметры

IXYS  IXFN200N07 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 8 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 3Pins
Weight 44g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 200A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 520W Tc
Turn Off Delay Time 100 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 2003
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 4Terminations
Termination Screw
ECCN Code EAR99
Resistance 6mOhm
Terminal Finish Nickel (Ni)
Additional Feature AVALANCHE RATED
Voltage - Rated DC 70V
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Current Rating 200A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PUFM-X4
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 520W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 9000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 480nC @ 10V
Rise Time 60ns
Vgs (Max) ±20V
Fall Time (Typ) 60 ns
Continuous Drain Current (ID) 200A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 70V
Pulsed Drain Current-Max (IDM) 600A
Dual Supply Voltage 70V
Avalanche Energy Rating (Eas) 2000 mJ
Recovery Time 250 ns
Isolation Voltage 2.5kV
Nominal Vgs 4 V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXFN200N07 Документы

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