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IXFN24N100 Технические параметры

IXYS  IXFN24N100 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 4 Weeks
Mount Chassis Mount, Panel, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 3Pins
Weight 40g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 24A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 568W Tc
Turn Off Delay Time 75 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 2000
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 4Terminations
Termination Screw
ECCN Code EAR99
Resistance 390mOhm
Terminal Finish Nickel (Ni)
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Voltage - Rated DC 1kV
Terminal Position UPPER
Terminal Form UNSPECIFIED
Current Rating 24A
Pin Count 4
JESD-30 Code R-PUFM-X4
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 600W
Case Connection ISOLATED
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 390m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 5.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 8700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 267nC @ 10V
Rise Time 35ns
Drain to Source Voltage (Vdss) 1000V
Vgs (Max) ±20V
Fall Time (Typ) 21 ns
Reverse Recovery Time 250 ns
Continuous Drain Current (ID) 24A
Threshold Voltage 5.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 96A
Dual Supply Voltage 1kV
Recovery Time 250 ns
Isolation Voltage 2.5kV
Nominal Vgs 5.5 V
Height 9.6mm
Length 38.23mm
Width 25.42mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IXFN24N100 Документы

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