[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

IXFN26N120P Технические параметры

IXYS  IXFN26N120P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 30 Weeks
Package / Case SOT-227-4, miniBLOC
Mounting Type Chassis Mount
Mount Chassis Mount
Number of Pins 4Pins
Transistor Element Material SILICON
Turn Off Delay Time 76 ns
Power Dissipation (Max) 695W Tc
Number of Elements 1 Element
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25℃ 23A Tc
Published 2006
Series Polar™
Packaging Tube
Operating Temperature -55°C~150°C TJ
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
Terminal Finish Nickel (Ni)
Additional Feature UL RECOGNIZED, AVALANCHE RATED
Terminal Position UPPER
Terminal Form UNSPECIFIED
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 695W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 460m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 14000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V
Rise Time 55ns
Drain to Source Voltage (Vdss) 1200V
Vgs (Max) ±30V
Fall Time (Typ) 58 ns
Continuous Drain Current (ID) 23A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 1.2kV
Pulsed Drain Current-Max (IDM) 60A
Avalanche Energy Rating (Eas) 1500 mJ
RoHS Status ROHS3 Compliant
Просмотр сходства

IXFN26N120P Документы

IXFN26N120P brand manufacturers: IXYS, Anli stock, IXFN26N120P reference price.IXYS. IXFN26N120P parameters, IXFN26N120P Datasheet PDF and pin diagram description download.You can use the IXFN26N120P Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IXFN26N120P pin diagram and circuit diagram and usage method of function,IXFN26N120P electronics tutorials.You can download from the Anli.