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IXFN27N80 Технические параметры
IXYS IXFN27N80 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | IXYS | |
| Factory Lead Time | 8 Weeks | |
| Mount | Chassis Mount | |
| Mounting Type | Chassis Mount | |
| Package / Case | SOT-227-4, miniBLOC | |
| Number of Pins | 4Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 27A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V 15V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 520W Tc | |
| Turn Off Delay Time | 75 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | HiPerFET™ | |
| Published | 2003 | |
| Pbfree Code | yes | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | Not Applicable | |
| Number of Terminations | 4Terminations | |
| Resistance | 300mOhm | |
| Terminal Finish | Nickel (Ni) | |
| Additional Feature | AVALANCHE RATED | |
| Voltage - Rated DC | 800V | |
| Terminal Position | UPPER |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | UNSPECIFIED | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Current Rating | 27A | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 4 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 520W | |
| Case Connection | ISOLATED | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 300m Ω @ 13.5A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 8mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 9740pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 400nC @ 10V | |
| Rise Time | 80ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 40 ns | |
| Continuous Drain Current (ID) | 27A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 800V | |
| Pulsed Drain Current-Max (IDM) | 108A | |
| Recovery Time | 250 ns | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
IXFN27N80 Документы
- DatasheetsIXFK(27,25)N80, IXFN(27,25)N80
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