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IXFN320N17T2 Технические параметры

IXYS  IXFN320N17T2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 30 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 260A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 1070W Tc
Turn Off Delay Time 115 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series GigaMOS™
Published 2009
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish NICKEL
Additional Feature UL RECOGNIZED
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Свойство продукта Значение свойства
JESD-30 Code R-PUFM-X4
Number of Outputs 1Output
Qualification Status Not Qualified
Output Voltage 170V
Element Configuration Single
Nominal Supply Current 100A
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.07kW
Output Current 260A
Case Connection ISOLATED
Turn On Delay Time 46 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.2m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 45000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 640nC @ 10V
Rise Time 170ns
Vgs (Max) ±20V
Fall Time (Typ) 230 ns
Continuous Drain Current (ID) 260A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0052Ohm
Drain to Source Breakdown Voltage 170V
Pulsed Drain Current-Max (IDM) 800A
Avalanche Energy Rating (Eas) 5000 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXFN320N17T2 Документы

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