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IXFN34N80 Технические параметры

IXYS  IXFN34N80 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 8 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 34A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 600W Tc
Turn Off Delay Time 100 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 2000
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
Terminal Finish Nickel (Ni)
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Terminal Position UPPER
Свойство продукта Значение свойства
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 600W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 240m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 7500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Rise Time 45ns
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Continuous Drain Current (ID) 34A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 136A
Avalanche Energy Rating (Eas) 3000 mJ
RoHS Status RoHS Compliant

IXFN34N80 Документы

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