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IXFN360N10T Технические параметры

IXYS  IXFN360N10T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 30 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 360A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 830W Tc
Turn Off Delay Time 80 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HiPerFET™
Published 2009
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Resistance 2.6MOhm
Terminal Finish NICKEL
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Свойство продукта Значение свойства
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 4
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 830W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.6m Ω @ 180A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 36000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 505nC @ 10V
Rise Time 100ns
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±20V
Fall Time (Typ) 160 ns
Continuous Drain Current (ID) 360A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 900A
Avalanche Energy Rating (Eas) 2000 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXFN360N10T Документы

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