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IXFN36N100 Технические параметры

IXYS  IXFN36N100 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 4 Weeks
Mount Chassis Mount, Panel, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 3Pins
Weight 46g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 36A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 700W Tc
Turn Off Delay Time 110 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 2003
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 4Terminations
Termination Screw
ECCN Code EAR99
Resistance 240mOhm
Terminal Finish Nickel (Ni)
Additional Feature AVALANCHE RATED
Voltage - Rated DC 1kV
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 36A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Pin Count 4
JESD-30 Code R-PUFM-X4
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 700W
Case Connection DRAIN
Turn On Delay Time 41 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 240m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 9200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 380nC @ 10V
Rise Time 55ns
Drain to Source Voltage (Vdss) 1000V
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Continuous Drain Current (ID) 36A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 1kV
Dual Supply Voltage 1kV
Avalanche Energy Rating (Eas) 4000 mJ
Isolation Voltage 2.5kV
Nominal Vgs 5 V
Height 9.6mm
Length 38.23mm
Width 25.42mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXFN36N100 Документы

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