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IXFN48N50U3 Технические параметры

IXYS  IXFN48N50U3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 48A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 520W Tc
Turn Off Delay Time 100 ns
Operating Temperature -40°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 2000
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
Terminal Finish Nickel (Ni)
Additional Feature AVALANCHE RATED
Terminal Position UPPER
Terminal Form UNSPECIFIED
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 35
Pin Count 4
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 520W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 8400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Rise Time 60ns
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Continuous Drain Current (ID) 48A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.08Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 192A
RoHS Status RoHS Compliant

IXFN48N50U3 Документы

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