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IXFN80N50 Технические параметры

IXYS  IXFN80N50 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 8 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4Pins
Weight 36mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 66A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 700W Tc
Turn Off Delay Time 102 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 2003
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 4Terminations
Termination Screw
ECCN Code EAR99
Resistance 55mOhm
Terminal Finish Nickel (Ni)
Additional Feature AVALANCHE RATED
Voltage - Rated DC 500V
Terminal Position UPPER
Terminal Form UNSPECIFIED
Свойство продукта Значение свойства
Current Rating 80A
Pin Count 4
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 780W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 55m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 9890pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 380nC @ 10V
Rise Time 70ns
Vgs (Max) ±20V
Fall Time (Typ) 27 ns
Reverse Recovery Time 250 ns
Continuous Drain Current (ID) 80A
Threshold Voltage 4.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 320A
Dual Supply Voltage 500V
Avalanche Energy Rating (Eas) 6000 mJ
Recovery Time 250 ns
Nominal Vgs 4.5 V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXFN80N50 Документы

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