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IXFN80N50P Технические параметры

IXYS  IXFN80N50P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Mount Chassis Mount, Panel
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 66A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 700W Tc
Turn Off Delay Time 70 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PolarHV™
Published 2006
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
Resistance 55MOhm
Terminal Finish Nickel (Ni)
Additional Feature UL RECOGNIZED, AVALANCHE RATED
Voltage - Rated DC 500V
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 80A
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 700W
Case Connection ISOLATED
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 65m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 12700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 195nC @ 10V
Rise Time 27ns
Vgs (Max) ±30V
Fall Time (Typ) 18 ns
Continuous Drain Current (ID) 66A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 200A
Avalanche Energy Rating (Eas) 3000 mJ
Height 9.6mm
Length 38.2mm
Width 25.07mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXFN80N50P Документы

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