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IXFN80N50Q2 Технические параметры

IXYS  IXFN80N50Q2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 72A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 890W Tc
Turn Off Delay Time 60 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 2003
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
Resistance 60MOhm
Terminal Finish Nickel (Ni)
Additional Feature AVALANCHE RATED
Terminal Position UPPER
Свойство продукта Значение свойства
Terminal Form UNSPECIFIED
Pin Count 4
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 890W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 12800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V
Rise Time 25ns
Vgs (Max) ±30V
Fall Time (Typ) 11 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 320A
Avalanche Energy Rating (Eas) 5000 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IXFN80N50Q2 Документы

IXFN80N50Q2 brand manufacturers: IXYS, Anli stock, IXFN80N50Q2 reference price.IXYS. IXFN80N50Q2 parameters, IXFN80N50Q2 Datasheet PDF and pin diagram description download.You can use the IXFN80N50Q2 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IXFN80N50Q2 pin diagram and circuit diagram and usage method of function,IXFN80N50Q2 electronics tutorials.You can download from the Anli.