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IXFN80N60P3 Технические параметры

IXYS  IXFN80N60P3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 30 Weeks
Mount Chassis Mount, Panel, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 66A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 960W Tc
Turn Off Delay Time 87 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™, Polar3™
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 4Terminations
ECCN Code EAR99
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 4
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 960W
Case Connection ISOLATED
Turn On Delay Time 48 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 70m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 13100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±30V
Continuous Drain Current (ID) 66A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.07Ohm
Pulsed Drain Current-Max (IDM) 200A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 2000 mJ
Height 9.6mm
Length 38.23mm
Width 25.07mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXFN80N60P3 Документы

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