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IXFN82N60P Технические параметры

IXYS  IXFN82N60P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 30 Weeks
Mount Chassis Mount, Panel
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 72A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 1040W Tc
Turn Off Delay Time 79 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PolarHV™
Published 2009
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Nickel (Ni)
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Pin Count 4
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.04kW
Case Connection ISOLATED
Turn On Delay Time 28 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 75m Ω @ 41A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 23000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Rise Time 23ns
Vgs (Max) ±30V
Fall Time (Typ) 24 ns
Continuous Drain Current (ID) 72A
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 82A
Drain-source On Resistance-Max 0.075Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 200A
Avalanche Energy Rating (Eas) 5000 mJ
Height 9.6mm
Length 38.2mm
Width 25.07mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXFN82N60P Документы

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