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IXFR10N100Q Технические параметры

IXYS  IXFR10N100Q technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS247™
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 9A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 250W Tc
Turn Off Delay Time 40 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 2002
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 250W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 5A, 10V
Vgs(th) (Max) @ Id 5.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Rise Time 23ns
Drain to Source Voltage (Vdss) 1000V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 9A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 9A
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 40A
RoHS Status ROHS3 Compliant

IXFR10N100Q Документы

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