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IXFR15N100Q3 Технические параметры

IXYS  IXFR15N100Q3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 247Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 10A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 400W Tc
Turn Off Delay Time 30 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Reach Compliance Code unknown
Pin Count 3
JESD-30 Code R-PSIP-T3
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 400W
Case Connection ISOLATED
Turn On Delay Time 28 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id 6.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 3250pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Rise Time 250ns
Drain to Source Voltage (Vdss) 1000V
Vgs (Max) ±30V
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 45A
Avalanche Energy Rating (Eas) 1000 mJ
Height 21.34mm
Length 16.13mm
Width 5.21mm
RoHS Status ROHS3 Compliant

IXFR15N100Q3 Документы

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