[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

IXFR16N120P Технические параметры

IXYS  IXFR16N120P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS247™
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 9A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 230W Tc
Turn Off Delay Time 66 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™, PolarP2™
Published 2012
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 230W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.04 Ω @ 8A, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 6900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Rise Time 28ns
Drain to Source Voltage (Vdss) 1200V
Vgs (Max) ±30V
Fall Time (Typ) 35 ns
Continuous Drain Current (ID) 9A
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 9A
Drain to Source Breakdown Voltage 1.2kV
Avalanche Energy Rating (Eas) 800 mJ
RoHS Status ROHS3 Compliant
Просмотр сходства

IXFR16N120P Документы

IXFR16N120P brand manufacturers: IXYS, Anli stock, IXFR16N120P reference price.IXYS. IXFR16N120P parameters, IXFR16N120P Datasheet PDF and pin diagram description download.You can use the IXFR16N120P Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IXFR16N120P pin diagram and circuit diagram and usage method of function,IXFR16N120P electronics tutorials.You can download from the Anli.