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IXFR180N10 Технические параметры

IXYS  IXFR180N10 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS247™
Number of Pins 247Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 165A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 400W Tc
Turn Off Delay Time 140 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 2000
Pbfree Code yes
Part Status Obsolete
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Voltage - Rated DC 100V
Current Rating 165A
Pin Count 3
JESD-30 Code R-PSIP-T3
Element Configuration Single
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 400W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 9400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 400nC @ 10V
Rise Time 90ns
Vgs (Max) ±20V
Fall Time (Typ) 65 ns
Reverse Recovery Time 250 ns
Continuous Drain Current (ID) 165A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.008Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 720A
Dual Supply Voltage 100V
Avalanche Energy Rating (Eas) 3000 mJ
Isolation Voltage 2.5kV
Nominal Vgs 4 V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IXFR180N10 Документы

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