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IXFT150N20T Технические параметры

IXYS  IXFT150N20T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 150A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 890W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™, TrenchT2™
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Terminal Position SINGLE
Свойство продукта Значение свойства
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 4
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 11700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 177nC @ 10V
Drain to Source Voltage (Vdss) 200V
Vgs (Max) ±20V
Continuous Drain Current (ID) 150A
Drain-source On Resistance-Max 0.015Ohm
Pulsed Drain Current-Max (IDM) 375A
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 1500 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXFT150N20T Документы

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