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IXFT20N80Q Технические параметры

IXYS  IXFT20N80Q technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 20A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 360W Tc
Turn Off Delay Time 74 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Terminal Form GULL WING
Свойство продукта Значение свойства
Pin Count 4
JESD-30 Code R-PSSO-G2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 360W
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 420m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 5100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Rise Time 27ns
Vgs (Max) ±20V
Fall Time (Typ) 14 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.42Ohm
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 80A
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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IXFT20N80Q Документы

IXFT20N80Q brand manufacturers: IXYS, Anli stock, IXFT20N80Q reference price.IXYS. IXFT20N80Q parameters, IXFT20N80Q Datasheet PDF and pin diagram description download.You can use the IXFT20N80Q Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IXFT20N80Q pin diagram and circuit diagram and usage method of function,IXFT20N80Q electronics tutorials.You can download from the Anli.