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IXFT24N90P Технические параметры

IXYS  IXFT24N90P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 24A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 660W Tc
Turn Off Delay Time 68 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™, PolarP2™
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 660W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 420m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 7200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Rise Time 40ns
Vgs (Max) ±30V
Fall Time (Typ) 38 ns
Continuous Drain Current (ID) 24A
Threshold Voltage 3.5V
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.42Ohm
Drain to Source Breakdown Voltage 900V
Pulsed Drain Current-Max (IDM) 48A
Avalanche Energy Rating (Eas) 1000 mJ
Nominal Vgs 3.5 V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

IXFT24N90P Документы

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