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IXFT26N60P Технические параметры

IXYS  IXFT26N60P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 26A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 460W Tc
Turn Off Delay Time 75 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PolarHV™
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Voltage - Rated DC 600V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Свойство продукта Значение свойства
Current Rating 26A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 460W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 270m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 4150pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Rise Time 27ns
Vgs (Max) ±30V
Fall Time (Typ) 21 ns
Continuous Drain Current (ID) 26A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.27Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 65A
Avalanche Energy Rating (Eas) 1200 mJ
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IXFT26N60P Документы

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