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IXFT50N60P3 Технические параметры

IXYS  IXFT50N60P3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 50A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 1040W Tc
Turn Off Delay Time 62 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™, Polar3™
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Additional Feature AVALANCHE RATED
Terminal Form GULL WING
Reach Compliance Code unknown
Pin Count 4
JESD-30 Code R-PSSO-G2
Свойство продукта Значение свойства
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.04kW
Case Connection DRAIN
Turn On Delay Time 31 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 145m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 6300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 94nC @ 10V
Rise Time 20ns
Vgs (Max) ±30V
Fall Time (Typ) 17 ns
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.145Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 125A
Avalanche Energy Rating (Eas) 1000 mJ
Height 5.1mm
Length 16.05mm
Width 14mm
RoHS Status ROHS3 Compliant

IXFT50N60P3 Документы

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