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IXFT52N30Q Технические параметры

IXYS  IXFT52N30Q technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 52A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 360W Tc
Turn Off Delay Time 80 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Resistance 60MOhm
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Свойство продукта Значение свойства
Voltage - Rated DC 300V
Terminal Form GULL WING
Current Rating 52A
Pin Count 4
JESD-30 Code R-PSSO-G2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 360W
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 60m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 5300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Rise Time 60ns
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 52A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 300V
Pulsed Drain Current-Max (IDM) 208A
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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IXFT52N30Q Документы

IXFT52N30Q brand manufacturers: IXYS, Anli stock, IXFT52N30Q reference price.IXYS. IXFT52N30Q parameters, IXFT52N30Q Datasheet PDF and pin diagram description download.You can use the IXFT52N30Q Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IXFT52N30Q pin diagram and circuit diagram and usage method of function,IXFT52N30Q electronics tutorials.You can download from the Anli.