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IXFT58N20Q Технические параметры

IXYS  IXFT58N20Q technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 58A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 300W Tc
Turn Off Delay Time 40 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 1999
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Resistance 40MOhm
Terminal Finish Matte Tin (Sn)
Свойство продукта Значение свойства
Additional Feature AVALANCHE RATED
Voltage - Rated DC 200V
Terminal Form GULL WING
Current Rating 58A
Pin Count 4
JESD-30 Code R-PSSO-G2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 29A, 10V
Vgs(th) (Max) @ Id 4V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Rise Time 40ns
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Continuous Drain Current (ID) 58A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IXFT58N20Q Документы

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