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IXFT60N60X3HV Технические параметры

IXYS  IXFT60N60X3HV technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Supplier Device Package TO-268HV (IXFT)
Mfr IXYS
Package Tube
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 625W (Tc)
Vds - Drain-Source Breakdown Voltage 600 V
Typical Turn-On Delay Time 35 ns
Vgs th - Gate-Source Threshold Voltage 5 V
Pd - Power Dissipation 625 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 30
Mounting Styles SMD/SMT
Channel Mode Enhancement
Manufacturer IXYS
Brand IXYS
Свойство продукта Значение свойства
Qg - Gate Charge 51 nC
Tradename HiPerFET
Rds On - Drain-Source Resistance 51 mOhms
RoHS Details
Typical Turn-Off Delay Time 76 ns
Id - Continuous Drain Current 60 A
Operating Temperature -55°C ~ 150°C (TJ)
Packaging Tube
Subcategory MOSFETs
Configuration Single
Number of Channels 1 ChannelChannel
FET Type N-Channel
Rds On (Max) @ Id, Vgs 51mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 3450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V
Rise Time 18 ns
Drain to Source Voltage (Vdss) 600 V
Vgs (Max) ±20V
Product Type MOSFET
Transistor Type 1 N-Channel
FET Feature -
Product Category MOSFET
Просмотр сходства
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