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IXFT66N20Q Технические параметры
IXYS IXFT66N20Q technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | IXYS | |
| Package / Case | TO-268-3 | |
| Surface Mount | YES | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Mounting Styles | SMD/SMT | |
| Transistor Polarity | N-Channel | |
| Vds - Drain-Source Breakdown Voltage | 200 V | |
| Id - Continuous Drain Current | 66 A | |
| Rds On - Drain-Source Resistance | 40 mOhms | |
| Vgs - Gate-Source Voltage | - 30 V, + 30 V | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 400 W | |
| Channel Mode | Enhancement | |
| Tradename | HyperFET | |
| Factory Pack QuantityFactory Pack Quantity | 30 | |
| Typical Turn-Off Delay Time | 50 ns | |
| Typical Turn-On Delay Time | 20 ns | |
| Unit Weight | 0.158733 oz | |
| Package Description | PLASTIC, TO-268, 3 PIN | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | IXFT66N20Q | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Risk Rank | 5.76 | |
| Part Package Code | TO-268AA | |
| Drain Current-Max (ID) | 66 A | |
| Packaging | Tube | |
| Series | IXFT66N20 | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | not_compliant | |
| Pin Count | 4 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Configuration | Single | |
| Number of Channels | 1 ChannelChannel | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Rise Time | 18 ns | |
| Polarity/Channel Type | N-CHANNEL | |
| Transistor Type | 1 N-Channel | |
| JEDEC-95 Code | TO-268AA | |
| Drain-source On Resistance-Max | 0.04 Ω | |
| Pulsed Drain Current-Max (IDM) | 264 A | |
| DS Breakdown Voltage-Min | 200 V | |
| Avalanche Energy Rating (Eas) | 1500 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Height | 5.1 mm | |
| Length | 16.05 mm | |
| Width | 14 mm |
Индекс :
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