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IXFT6N100Q Технические параметры
IXYS IXFT6N100Q technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | IXYS | |
| Factory Lead Time | 8 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 6A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 180W Tc | |
| Turn Off Delay Time | 22 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | HiPerFET™ | |
| Published | 2003 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| Terminal Finish | Matte Tin (Sn) | |
| Additional Feature | AVALANCHE RATED | |
| Terminal Form | GULL WING | |
| Pin Count | 4 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-30 Code | R-PSSO-G2 | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 180W | |
| Case Connection | DRAIN | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 1.9 Ω @ 3A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 2.5mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 2200pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V | |
| Rise Time | 15ns | |
| Drain to Source Voltage (Vdss) | 1000V | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 12 ns | |
| Continuous Drain Current (ID) | 6A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain Current-Max (Abs) (ID) | 6A | |
| Drain-source On Resistance-Max | 2Ohm | |
| Drain to Source Breakdown Voltage | 1kV | |
| Pulsed Drain Current-Max (IDM) | 24A | |
| Avalanche Energy Rating (Eas) | 700 mJ | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |
IXFT6N100Q Документы
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