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IXFV12N120P Технические параметры

IXYS  IXFV12N120P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3, Short Tab
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 12A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 543W Tc
Turn Off Delay Time 62 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™, PolarP2™
Published 2008
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 543W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.35 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 5400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 103nC @ 10V
Rise Time 25ns
Drain to Source Voltage (Vdss) 1200V
Vgs (Max) ±30V
Fall Time (Typ) 34 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 1.2kV
Avalanche Energy Rating (Eas) 500 mJ
RoHS Status RoHS Compliant

IXFV12N120P Документы

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