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IXFV18N60PS Технические параметры

IXYS  IXFV18N60PS technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PLUS-220SMD
Number of Pins 220Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 18A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 360W Tc
Turn Off Delay Time 62 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™, PolarHT™
Published 2006
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Termination SMD/SMT
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Voltage - Rated DC 600V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 18A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Свойство продукта Значение свойства
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 360W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 400m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Rise Time 22ns
Vgs (Max) ±30V
Fall Time (Typ) 22 ns
Reverse Recovery Time 200 ns
Continuous Drain Current (ID) 18A
Threshold Voltage 5.5V
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.4Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 45A
Dual Supply Voltage 600V
Avalanche Energy Rating (Eas) 1000 mJ
Nominal Vgs 5.5 V
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

IXFV18N60PS Документы

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