Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
IXFX24N100 Технические параметры
IXYS IXFX24N100 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | IXYS | |
| Factory Lead Time | 8 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 24A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 560W Tc | |
| Turn Off Delay Time | 75 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | HiPerFET™ | |
| Published | 2008 | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Resistance | 390mOhm | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Additional Feature | AVALANCHE RATED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 3 | |
| Qualification Status | Not Qualified | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 560W | |
| Case Connection | DRAIN | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 390m Ω @ 12A, 10V | |
| Vgs(th) (Max) @ Id | 5.5V @ 8mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 8700pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 267nC @ 10V | |
| Rise Time | 35ns | |
| Drain to Source Voltage (Vdss) | 1000V | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 21 ns | |
| Continuous Drain Current (ID) | 24A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 1kV | |
| Pulsed Drain Current-Max (IDM) | 96A | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
IXFX24N100 Документы
- DatasheetsIXF(K,X)24N100
- PCN Obsolescence/ EOLMult Devices OBS 24/Feb/2014
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ