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IXFX34N80 Технические параметры

IXYS  IXFX34N80 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка IXYS
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 34A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 560W Tc
Turn Off Delay Time 100 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 2000
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3Terminations
Resistance 240MOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Свойство продукта Значение свойства
Voltage - Rated DC 800V
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 34A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 560W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 240m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 7500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Rise Time 45ns
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Continuous Drain Current (ID) 34A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 800V
RoHS Status RoHS Compliant
Lead Free Lead Free

IXFX34N80 Документы

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