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IXGA30N120B3 Технические параметры
IXYS IXGA30N120B3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | IXYS | |
| Factory Lead Time | 30 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 1.2kV | |
| Collector-Emitter Saturation Voltage | 2.96V | |
| Number of Elements | 1 Element | |
| Test Conditions | 960V, 30A, 5 Ω, 15V | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | GenX3™ | |
| Published | 2008 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | PURE TIN | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Max Power Dissipation | 300W | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Reach Compliance Code | unknown | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | IXG*30N120 | |
| Pin Count | 4 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Element Configuration | Single | |
| Power Dissipation | 300W | |
| Case Connection | COLLECTOR | |
| Input Type | Standard | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 1.2kV | |
| Max Collector Current | 60A | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Turn On Time | 56 ns | |
| Vce(on) (Max) @ Vge, Ic | 3.5V @ 15V, 30A | |
| Turn Off Time-Nom (toff) | 471 ns | |
| IGBT Type | PT | |
| Gate Charge | 87nC | |
| Current - Collector Pulsed (Icm) | 150A | |
| Td (on/off) @ 25°C | 16ns/127ns | |
| Switching Energy | 3.47mJ (on), 2.16mJ (off) | |
| Gate-Emitter Voltage-Max | 20V | |
| Gate-Emitter Thr Voltage-Max | 5V | |
| REACH SVHC | No SVHC | |
| RoHS Status | ROHS3 Compliant |
IXGA30N120B3 Документы
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