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IXGH12N120A3 Технические параметры

IXYS  IXGH12N120A3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка IXYS
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 1 Element
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series GenX3™
Published 2010
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Additional Feature LOW CONDUCTION LOSS
Max Power Dissipation 100W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 100W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3V
Max Collector Current 22A
JEDEC-95 Code TO-247AD
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 202 ns
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 12A
Turn Off Time-Nom (toff) 1545 ns
IGBT Type PT
Gate Charge 20.4nC
Current - Collector Pulsed (Icm) 60A
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
RoHS Status ROHS3 Compliant
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IXGH12N120A3 Документы

IXGH12N120A3 brand manufacturers: IXYS, Anli stock, IXGH12N120A3 reference price.IXYS. IXGH12N120A3 parameters, IXGH12N120A3 Datasheet PDF and pin diagram description download.You can use the IXGH12N120A3 Transistors - IGBTs - Single, DSP Datesheet PDF, find IXGH12N120A3 pin diagram and circuit diagram and usage method of function,IXGH12N120A3 electronics tutorials.You can download from the Anli.